Simulation and design of junction termination structures for diamond Schottky diodes

Fabien Thion (1, 2, 3) , Karine Isoird (2) , Dominique Planson (1, 3) , Marie-Laure Locatelli (4) , Hui Ding (5, 2)

1 EE - Ampère, Département Energie Electrique
2 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon
4 LAPLACE-MDCE - Matériaux Diélectriques dans la Conversion d’Energie
5 LAAS - Laboratoire d'analyse et d'architecture des systèmes

In this paper, the first step of the design of a junction termination structure usable on diamond Schottky diodes is introduced. Through the collaboration of AMPERE and LAAS laboratories, a study of junction termination structures using field plates and semi-resistive materials was carried out. Several results from simulations of p-type Schottky diodes protected by MESA etching and coated with several layers of dielectric materials are shown in this paper. The analysis of those simulations, conducted on pseudo-vertical diodes protected by a field plate on a semi-resistive layer deposited on top of a dielectric, shows a great efficiency of such junction termination structures.

Domaines: Electronique; Energie électrique

Fabien Thion, Karine Isoird, Dominique Planson, Marie-Laure Locatelli, Hui Ding. Simulation and design of junction termination structures for diamond Schottky diodes. Diamond and Related Materials, 2011, 20 (5-6), pp.729-732. ⟨10.1016/j.diamond.2011.03.011⟩. ⟨hal-00661491⟩